 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CM75DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM U-Series Module 75 Amperes/600 Volts TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N 0.110 - 0.5 Tab P S R T E2 G2 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75DU-12H is a 600V (VCES), 75 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 75 VCES Volts (x 50) 12 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 3.7 3.150.01 1.89 0.94 0.28 0.67 0.91 0.91 0.43 0.71 0.16 Millimeters 94.0 80.00.25 48.0 24.0 7.0 17.0 23.0 23.0 11.0 18.0 4.0 Dimensions M N O P Q R S T U V Inches 0.47 0.53 0.1 0.63 0.98 Millimeters 12.0 13.5 2.5 16.0 25.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 0.3 0.83 0.16 0.51 7.5 21.2 4.0 13.0 17 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-12H Dual IGBTMODTM U-Series Module 75 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM75DU-12H -40 to 150 -40 to 125 600 20 75 150* 75 150* 310 31 40 310 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics,Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V, Tj = 25C IC = 75A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.4 2.6 150 - Max. 1 0.5 7.5 3.0 - - 2.6 Units mA A Volts Volts Volts nC Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 , Resistive Load Switching Operation IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.18 Max. 6.6 3.6 1 100 250 200 300 160 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.035 Max. 0.4 0.9 - Units C/W C/W C/W 18 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-12H Dual IGBTMODTM U-Series Module 75 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 COLLECTOR CURRENT, IC, (AMPERES) 125 100 75 50 25 0 0 VGE = 20V 12 125 100 75 50 25 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 14 15 150 13 VCE = 10V Tj = 25C Tj = 125C 5 VGE = 15V Tj = 25C Tj = 125C 4 3 2 1 11 10 9 8 0 0 4 8 12 16 20 0 40 80 120 160 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) VGE = 0V f = 1MHz 8 6 4 2 IC = 30A IC = 75A IC = 150A EMITTER CURRENT, IE, (AMPERES) 101 Cies 102 100 Coes Cres 101 10-1 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10-2 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -150A/sec Tj = 25C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 VCC = 300V VGE = 15V RG = 8.3 Tj = 125C td(off) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 75A VCC = 200V VCC = 300V SWITCHING TIME, (ns) 15 tf 102 102 trr 101 10 td(on) Irr 5 101 100 tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 102 100 103 0 0 50 100 150 200 GATE CHARGE, QG, (nC) EMITTER CURRENT, IE, (AMPERES) 19 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-12H Dual IGBTMODTM U-Series Module 75 Amperes/600 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.4C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.9C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 20 |
Price & Availability of CM75DU-12H
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |